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MOS interface physics, process and characterization /
正題名/作者 ： MOS interface physics, process and characterization // Shengkai Wang and Xiaolei Wang.
作者 ： Wang, Shengkai,
其他作者 ： Wang, Xiaolei,
出版者 ： Boca Raton :CRC Press/Taylor & Francis Group,2022.
面頁冊數 ： xi, 161 p. :ill. ;24 cm.
標題 ： Integrated circuits - Research. -
ISBN ： 9781032106274 (hbk.)
ISBN ： 9781032106281 (pbk.)
ISBN ： 9781003216285 (ebk.)
LEADER 01101cam 2200205 a 450
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008 200413s2022 flua b 000 0 eng
010 $a 2021017023
020 $a9781032106274 (hbk.)
020 $a9781032106281 (pbk.)
020 $a9781003216285 (ebk.)
035 $a00394008
050 00$aTK7871.99.M44$bW358 2022
082 00$a621.3815/284$223
090 $a621.3815284/W184///UM066023
100 1 $aWang, Shengkai,$d1984-$3601971
245 10$aMOS interface physics, process and characterization /$cShengkai Wang and Xiaolei Wang.
260 $aBoca Raton :$bCRC Press/Taylor & Francis Group,$c2022.
300 $axi, 161 p. :$bill. ;$c24 cm.
504 $aIncludes bibliographical references.
520 $a"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integratedcircuit and the key to achieving high performance devices and integratedcircuits is high quality MOS structure. This book contains abundantexperimental examples focusing on MOS structure. The volume will be anessential reference for academics and postgraduates within the field ofmicroelectronics"--$cProvided by publisher.
650 0$aIntegrated circuits$xResearch.$3601973
650 0$aMetal oxide semiconductors$xDesign and construction$xMathematics.$3601974
650 0$aSemiconductors$xJunctions.$3464847
650 0$aSolid state physics$xExperiments.$3601975
700 1 $aWang, Xiaolei,$d1985-$3601972
Wang, Shengkai,1984-
MOS interface physics, process and characterization /Shengkai Wang and Xiaolei Wang. - Boca Raton :CRC Press/Taylor & Francis Group,2022. - xi, 161 p. :ill. ;24 cm.
Includes bibliographical references.
"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integratedcircuit and the key to achieving high performance devices and integratedcircuits is high quality MOS structure. This book contains abundantexperimental examples focusing on MOS structure. The volume will be anessential reference for academics and postgraduates within the field ofmicroelectronics"--
ISBN: 9781032106274 (hbk.)
LCCN: 2021017023Subjects--Topical Terms:
601973
Integrated circuits
--Research.
LC Class. No.: TK7871.99.M44 / W358 2022
Dewey Class. No.: 621.3815/284
MOS interface physics, process and characterization /Shengkai Wang and Xiaolei Wang. - Boca Raton :CRC Press/Taylor & Francis Group,2022. - xi, 161 p. :ill. ;24 cm.
Includes bibliographical references.
"The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integratedcircuit and the key to achieving high performance devices and integratedcircuits is high quality MOS structure. This book contains abundantexperimental examples focusing on MOS structure. The volume will be anessential reference for academics and postgraduates within the field ofmicroelectronics"--
ISBN: 9781032106274 (hbk.)
LCCN: 2021017023Subjects--Topical Terms:
601973
Integrated circuits
--Research.
LC Class. No.: TK7871.99.M44 / W358 2022
Dewey Class. No.: 621.3815/284
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